Diodes Incorporated BCX5310TA

Name: BCX5310TA
Brand: Diodes Incorporated
SKU: 3585226-BCX5310TA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCX5310TA

Manufacturer:: Diodes Incorporated

Ventron No:: 3585226-BCX5310TA

Description:: TRANS PNP 80V 1A SOT89

ECAD Model:

Datasheet:: BCX5310TA

Specifications

Diodes Incorporated BCX5310TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BCX5310TA.

Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
150MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BCX53
Pin Count
3
JESD-30 Code
R-PSSO-F3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Height
1.5mm
Length
4.5mm
Width
2.5mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

BCX5310TA Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 1A volts is possible.

BCX5310TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

BCX5310TA Applications
There are a lot of Diodes Incorporated
BCX5310TA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCX5310TA More Descriptions

Bipolar (BJT) Transistor PNP 80 V 1 A 150MHz 1 W Surface Mount SOT-89-3
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 80V 1A Automotive 4-Pin(3 Tab) SOT-89 T/R

Certification