Nexperia USA Inc. BCX53-16,115
- Part Number:
- BCX53-16,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3068662-BCX53-16,115
- Description:
- TRANS PNP 80V 1A SOT89
- Datasheet:
- BCX53-16,115
Nexperia USA Inc. BCX53-16,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX53-16,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- Terminal PositionSINGLE
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBCX53
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1.35W
- Case ConnectionCOLLECTOR
- Power - Max1.3W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product145MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)1A
- Transition Frequency145MHz
- Collector Emitter Saturation Voltage-500mV
- Collector Base Voltage (VCBO)-100V
- Emitter Base Voltage (VEBO)-5V
- hFE Min100
- Max Junction Temperature (Tj)150°C
- Ambient Temperature Range High150°C
- Height1.6mm
- RoHS StatusROHS3 Compliant
BCX53-16,115 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 145MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCX53-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 145MHz
BCX53-16,115 Applications
There are a lot of Nexperia USA Inc.
BCX53-16,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 145MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCX53-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 145MHz
BCX53-16,115 Applications
There are a lot of Nexperia USA Inc.
BCX53-16,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX53-16,115 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA
Trans GP BJT PNP 80V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Transistor PNP, SOT-89-3 80V 1ASurface Mount
Transistors - Bipolar (BJT) - Single TO-243AA 1 (Unlimited) Tape & Reel (TR) Surface Mount PNP 100 @ 150mA 2V 500mV @ 50mA, 500mA 150°C TJ 100nA ICBO TRANS PNP 80V 1A SOT89
TRANSISTOR, PNP, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:145MHz; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain hFE:100; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-89; No. of Pins:3; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 1 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 250 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 500 / Package Type = SOT-89 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1
Trans GP BJT PNP 80V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Transistor PNP, SOT-89-3 80V 1ASurface Mount
Transistors - Bipolar (BJT) - Single TO-243AA 1 (Unlimited) Tape & Reel (TR) Surface Mount PNP 100 @ 150mA 2V 500mV @ 50mA, 500mA 150°C TJ 100nA ICBO TRANS PNP 80V 1A SOT89
TRANSISTOR, PNP, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:145MHz; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain hFE:100; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-89; No. of Pins:3; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 1 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 250 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 500 / Package Type = SOT-89 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1
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