BCX53-16,115

Nexperia USA Inc. BCX53-16,115

Part Number:
BCX53-16,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
3068662-BCX53-16,115
Description:
TRANS PNP 80V 1A SOT89
ECAD Model:
Datasheet:
BCX53-16,115

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Specifications
Nexperia USA Inc. BCX53-16,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX53-16,115.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    SINGLE
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BCX53
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1.35W
  • Case Connection
    COLLECTOR
  • Power - Max
    1.3W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    145MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    -80V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Current - Collector (Ic) (Max)
    1A
  • Transition Frequency
    145MHz
  • Collector Emitter Saturation Voltage
    -500mV
  • Collector Base Voltage (VCBO)
    -100V
  • Emitter Base Voltage (VEBO)
    -5V
  • hFE Min
    100
  • Max Junction Temperature (Tj)
    150°C
  • Ambient Temperature Range High
    150°C
  • Height
    1.6mm
  • RoHS Status
    ROHS3 Compliant
Description
BCX53-16,115 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 145MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

BCX53-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 145MHz


BCX53-16,115 Applications
There are a lot of Nexperia USA Inc.
BCX53-16,115 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BCX53-16,115 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA
Trans GP BJT PNP 80V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Transistor PNP, SOT-89-3 80V 1ASurface Mount
Transistors - Bipolar (BJT) - Single TO-243AA 1 (Unlimited) Tape & Reel (TR) Surface Mount PNP 100 @ 150mA 2V 500mV @ 50mA, 500mA 150°C TJ 100nA ICBO TRANS PNP 80V 1A SOT89
TRANSISTOR, PNP, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:145MHz; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain hFE:100; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-89; No. of Pins:3; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 1 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 250 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 500 / Package Type = SOT-89 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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