Nexperia USA Inc. BCX53-10,135
- Part Number:
- BCX53-10,135
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2846142-BCX53-10,135
- Description:
- TRANS PNP 80V 1A SOT89
- Datasheet:
- BCX53-10,135
Nexperia USA Inc. BCX53-10,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX53-10,135.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Max Power Dissipation1.3W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency145MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBCX53
- Pin Count3
- JESD-30 CodeR-PSSO-F3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.35W
- Case ConnectionCOLLECTOR
- Power - Max1.3W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product145MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency145MHz
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- RoHS StatusROHS3 Compliant
BCX53-10,135 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 145MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
BCX53-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCX53-10,135 Applications
There are a lot of Nexperia USA Inc.
BCX53-10,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 145MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
BCX53-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCX53-10,135 Applications
There are a lot of Nexperia USA Inc.
BCX53-10,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX53-10,135 More Descriptions
Trans GP BJT PNP 80V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BCX53-10,135
80V 500mW 1A 63@150mA,2V 145MHz 500mV@500mA,50mA PNP 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BCX53-10,135
80V 500mW 1A 63@150mA,2V 145MHz 500mV@500mA,50mA PNP 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
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