BCX53-10,135

Nexperia USA Inc. BCX53-10,135

Part Number:
BCX53-10,135
Manufacturer:
Nexperia USA Inc.
Ventron No:
2846142-BCX53-10,135
Description:
TRANS PNP 80V 1A SOT89
ECAD Model:
Datasheet:
BCX53-10,135

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Specifications
Nexperia USA Inc. BCX53-10,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX53-10,135.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Max Power Dissipation
    1.3W
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    145MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BCX53
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-F3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.35W
  • Case Connection
    COLLECTOR
  • Power - Max
    1.3W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    145MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    63 @ 150mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    145MHz
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • RoHS Status
    ROHS3 Compliant
Description
BCX53-10,135 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 145MHz is present in the part.Collector current can be as low as 1A volts at its maximum.

BCX53-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz


BCX53-10,135 Applications
There are a lot of Nexperia USA Inc.
BCX53-10,135 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BCX53-10,135 More Descriptions
Trans GP BJT PNP 80V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BCX53-10,135
80V 500mW 1A 63@150mA,2V 145MHz 500mV@500mA,50mA PNP 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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