Nexperia USA Inc. BCX53-10,115

Name: BCX53-10,115
Brand: Nexperia USA Inc.
SKU: 2845771-BCX53-10,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCX53-10,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2845771-BCX53-10,115

Description:: TRANS PNP 80V 1A SOT89

ECAD Model:

Datasheet:: BCX53-10,115

Specifications

Nexperia USA Inc. BCX53-10,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX53-10,115.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
1.3W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
145MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BCX53
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.35W
Case Connection
COLLECTOR
Power - Max
1.3W
Transistor Application
SWITCHING
Gain Bandwidth Product
145MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
145MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Height
1.6mm
Length
4.6mm
Width
2.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCX53-10,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 145MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

BCX53-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz

BCX53-10,115 Applications
There are a lot of Nexperia USA Inc.
BCX53-10,115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCX53-10,115 More Descriptions

Trans GP BJT PNP 80V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA
80V 500mW 1A 63@150mA,2V 145MHz 500mV@500mA,50mA PNP 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency Typ, ft:145MHz; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain Max (hfe):63 ;RoHS Compliant: Yes

Certification