BCX5116TA

Diodes Incorporated BCX5116TA

Part Number:
BCX5116TA
Manufacturer:
Diodes Incorporated
Ventron No:
3068963-BCX5116TA
Description:
TRANS PNP 45V 1A SOT89
ECAD Model:
Datasheet:
BCX5116TA

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Specifications
Diodes Incorporated BCX5116TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BCX5116TA.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Number of Pins
    4
  • Weight
    51.993025mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1W
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    150MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BCX51
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-F3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    150MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    45V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    45V
  • Transition Frequency
    150MHz
  • Collector Emitter Saturation Voltage
    -500mV
  • Max Breakdown Voltage
    45V
  • Collector Base Voltage (VCBO)
    45V
  • Emitter Base Voltage (VEBO)
    -5V
  • Height
    1.5mm
  • Length
    4.5mm
  • Width
    2.5mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BCX5116TA Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 45V volts.The maximum collector current is 1A volts.

BCX5116TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 150MHz


BCX5116TA Applications
There are a lot of Diodes Incorporated
BCX5116TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BCX5116TA More Descriptions
BCX51 Series 45 V 1 A PNP Surface Mount Medium Power Transistor - SOT-89
Trans GP BJT PNP 45V 1A 2000mW 4-Pin(3 Tab) SOT-89 T/R
Transistor, PNP, 45V, 1A, 150DEG C, 2W;
Pwr Mid Perf Transistor Sot89 T&r 1K
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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