Diodes Incorporated BCX5116TA
- Part Number:
- BCX5116TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068963-BCX5116TA
- Description:
- TRANS PNP 45V 1A SOT89
- Datasheet:
- BCX5116TA
Diodes Incorporated BCX5116TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BCX5116TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Weight51.993025mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBCX51
- Pin Count3
- JESD-30 CodeR-PSSO-F3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)45V
- Emitter Base Voltage (VEBO)-5V
- Height1.5mm
- Length4.5mm
- Width2.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCX5116TA Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 45V volts.The maximum collector current is 1A volts.
BCX5116TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 150MHz
BCX5116TA Applications
There are a lot of Diodes Incorporated
BCX5116TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 45V volts.The maximum collector current is 1A volts.
BCX5116TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 150MHz
BCX5116TA Applications
There are a lot of Diodes Incorporated
BCX5116TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX5116TA More Descriptions
BCX51 Series 45 V 1 A PNP Surface Mount Medium Power Transistor - SOT-89
Trans GP BJT PNP 45V 1A 2000mW 4-Pin(3 Tab) SOT-89 T/R
Transistor, PNP, 45V, 1A, 150DEG C, 2W;
Pwr Mid Perf Transistor Sot89 T&r 1K
Trans GP BJT PNP 45V 1A 2000mW 4-Pin(3 Tab) SOT-89 T/R
Transistor, PNP, 45V, 1A, 150DEG C, 2W;
Pwr Mid Perf Transistor Sot89 T&r 1K
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