Nexperia USA Inc. BCX51-16,115

Name: BCX51-16,115
Brand: Nexperia USA Inc.
SKU: 2463050-BCX51-16,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCX51-16,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2463050-BCX51-16,115

Description:: TRANS PNP 45V 1A SOT89

ECAD Model:

Datasheet:: BCX51-16,115

Specifications

Nexperia USA Inc. BCX51-16,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX51-16,115.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
1.3W
Terminal Form
FLAT
Frequency
145MHz
Base Part Number
BCX51
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.35W
Case Connection
COLLECTOR
Power - Max
1.3W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
145MHz
Forward Voltage
1.2V
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Height
1.6mm
Length
4.6mm
Width
2.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCX51-16,115 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.50MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.

BCX51-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz

BCX51-16,115 Applications
There are a lot of Nexperia USA Inc.
BCX51-16,115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCX51-16,115 More Descriptions

Trans GP BJT PNP 45V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, Plastic/Epoxy, 3 Pin
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency Typ, ft:145MHz; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes

Certification