Nexperia USA Inc. BCX51-10,115
- Part Number:
- BCX51-10,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2847555-BCX51-10,115
- Description:
- TRANS PNP 45V 1A SOT89
- Datasheet:
- BCX51-10,115
Nexperia USA Inc. BCX51-10,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX51-10,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.75
- Terminal PositionSINGLE
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBCX51
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation500mW
- Case ConnectionCOLLECTOR
- Power - Max1.3W
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)1A
- Transition Frequency50MHz
- Frequency - Transition145MHz
- RoHS StatusROHS3 Compliant
BCX51-10,115 Overview
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.As a result, the part has a transition frequency of 50MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BCX51-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 50MHz
BCX51-10,115 Applications
There are a lot of Nexperia USA Inc.
BCX51-10,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.As a result, the part has a transition frequency of 50MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BCX51-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 50MHz
BCX51-10,115 Applications
There are a lot of Nexperia USA Inc.
BCX51-10,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX51-10,115 More Descriptions
BIPOLAR TRANSISTOR, MED POWER, PNP, -45V, -1A, 3SOT89
Trans GP BJT PNP 45V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
45V 500mW 1A 63@150mA,2V 145MHz 500mV@500mA,50mA PNP 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:-45V; Transition Frequency Typ, ft:145MHz; Power Dissipation, Pd:500mW; DC Collector Current:-1A; DC Current Gain Max (hfe):63 ;RoHS Compliant: Yes
Trans GP BJT PNP 45V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
45V 500mW 1A 63@150mA,2V 145MHz 500mV@500mA,50mA PNP 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:-45V; Transition Frequency Typ, ft:145MHz; Power Dissipation, Pd:500mW; DC Collector Current:-1A; DC Current Gain Max (hfe):63 ;RoHS Compliant: Yes
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