Nexperia USA Inc. BCX51,115
- Part Number:
- BCX51,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845817-BCX51,115
- Description:
- TRANS PNP 45V 1A SOT89
- Datasheet:
- BCX51,115
Nexperia USA Inc. BCX51,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCX51,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.75
- Terminal PositionSINGLE
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBCX51
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max1.3W
- Transistor ApplicationAMPLIFIER
- Forward Voltage1.2V
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)1A
- Transition Frequency50MHz
- Frequency - Transition145MHz
- RoHS StatusROHS3 Compliant
BCX51,115 Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.There is a 45V maximal voltage in the device due to collector-emitter breakdown.
BCX51,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 50MHz
BCX51,115 Applications
There are a lot of Nexperia USA Inc.
BCX51,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.There is a 45V maximal voltage in the device due to collector-emitter breakdown.
BCX51,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 50MHz
BCX51,115 Applications
There are a lot of Nexperia USA Inc.
BCX51,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCX51,115 More Descriptions
Transistor: PNP; bipolar; -45V; -1A; 0.5W; -55 150 deg.C; SMD; SOT89
Trans GP BJT PNP 45V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, Plastic/Epoxy, 3 Pin
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency Typ, ft:145MHz; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain Max (hfe):63 ;RoHS Compliant: Yes
Trans GP BJT PNP 45V 1A 1350mW Automotive 4-Pin(3 Tab) SOT-89 T/R
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-243, Plastic/Epoxy, 3 Pin
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency Typ, ft:145MHz; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain Max (hfe):63 ;RoHS Compliant: Yes
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