Infineon Technologies BCX 56-10 E6327
- Part Number:
- BCX 56-10 E6327
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2464157-BCX 56-10 E6327
- Description:
- TRANS NPN 80V 1A SOT-89
- Datasheet:
- BCX 56-10 E6327
Infineon Technologies BCX 56-10 E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCX 56-10 E6327.
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Terminal PositionSINGLE
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBCX56
- JESD-30 CodeR-PSSO-F3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max2W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)1A
- Transition Frequency100MHz
- Frequency - Transition100MHz
- Power Dissipation-Max (Abs)1W
- RoHS StatusRoHS Compliant
BCX 56-10 E6327 Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
BCX 56-10 E6327 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz
BCX 56-10 E6327 Applications
There are a lot of Infineon Technologies
BCX 56-10 E6327 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
BCX 56-10 E6327 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz
BCX 56-10 E6327 Applications
There are a lot of Infineon Technologies
BCX 56-10 E6327 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
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