ON Semiconductor BCW72LT1G
- Part Number:
- BCW72LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463404-BCW72LT1G
- Description:
- TRANS NPN 45V 0.1A SOT-23
- Datasheet:
- BCW72LT1G
ON Semiconductor BCW72LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BCW72LT1G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC45V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBCW72
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage210mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- hFE Min200
- Height940μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCW72LT1G Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 500μA, 10mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BCW72LT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BCW72LT1G Applications
There are a lot of ON Semiconductor
BCW72LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 500μA, 10mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BCW72LT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BCW72LT1G Applications
There are a lot of ON Semiconductor
BCW72LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCW72LT1G More Descriptions
Trans GP BJT NPN 45V 0.1A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
ON Semi BCW72LT1G NPN Bipolar Transistor, 0.1 A, 45 V, 3-Pin SOT-23 | ON Semiconductor BCW72LT1G
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
BCW Series 45 V 100 mA SMT NPN Silicon General Purpose Transistor - SOT-23
Trans GP BJT NPN 45V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
45V 225mW 100mA 200@2mA5V 300MHz 210mV@50mA2.5mA NPN -55¡Í~ 150¡Í@(Tj) SOT-23-3 Bipolar Transistors - BJT ROHS
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:45V; Dc Collector Current:100Ma; Power Dissipation Pd:225Mw; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:300Mhz; Dc Current Gain Hfe:200Hferohs Compliant: Yes
ON Semi BCW72LT1G NPN Bipolar Transistor, 0.1 A, 45 V, 3-Pin SOT-23 | ON Semiconductor BCW72LT1G
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
BCW Series 45 V 100 mA SMT NPN Silicon General Purpose Transistor - SOT-23
Trans GP BJT NPN 45V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
45V 225mW 100mA 200@2mA5V 300MHz 210mV@50mA2.5mA NPN -55¡Í~ 150¡Í@(Tj) SOT-23-3 Bipolar Transistors - BJT ROHS
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:45V; Dc Collector Current:100Ma; Power Dissipation Pd:225Mw; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:300Mhz; Dc Current Gain Hfe:200Hferohs Compliant: Yes
The three parts on the right have similar specifications to BCW72LT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountSeriesQualification StatusTerminal FinishHTS CodeConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionVCEsat-MaxWeightForward CurrentForward VoltageMax Repetitive Reverse Voltage (Vrrm)Max Forward Surge Current (Ifsm)View Compare
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BCW72LT1GACTIVE (Last Updated: 2 days ago)4 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Other Transistors45V300mWDUALGULL WING260100mA300MHz40BCW7231Single300mWSWITCHING300MHzNPNNPN45V100mA200 @ 2mA 5V100nA ICBO250mV @ 500μA, 10mA45V300MHz210mV45V50V5V200940μm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free-----------------
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-4 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3-3SILICON150°C TJTape & Reel (TR)2009e3-Active1 (Unlimited)3EAR99--250mWDUALGULL WING260-100MHz40BCW7231Single250mWSWITCHING100MHzNPNNPN45V100mA200 @ 2mA 5V100nA ICBO210mV @ 2.5mA, 50mA45V100MHz--50V5V------ROHS3 Compliant-Surface MountAutomotive, AEC-Q101Not Qualified-------------
-
-4 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3YES3SILICON150°C TJTape & Reel (TR)2009e3-Active1 (Unlimited)3EAR99---DUALGULL WING260--40BCW7231--SWITCHING-NPNNPN--200 @ 2mA 5V100nA ICBO210mV @ 2.5mA, 50mA-100MHz----------ROHS3 Compliant--Automotive, AEC-Q101Not QualifiedTin (Sn)8541.21.00.95SINGLE250mW45V100mA100MHz0.25 V-----
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-4 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3-3SILICON150°C TJTape & Reel (TR)2009e3-Active1 (Unlimited)3EAR99--250mWDUALGULL WING260-100MHz40BCW7031Single250mWSWITCHING100MHzPNPPNP45V100mA215 @ 2mA 5V100nA ICBO150mV @ 2.5mA, 50mA45V100MHz-45V50V5V-6.35mm6.35mm6.35mmNo SVHCNoROHS3 CompliantLead FreeSurface MountAutomotive, AEC-Q101---------4.535924g250mA1.25V250V9A
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