Infineon Technologies BCR48PNH6327XTSA1
- Part Number:
- BCR48PNH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2844636-BCR48PNH6327XTSA1
- Description:
- TRANS NPN/PNP PREBIAS SOT363
- Datasheet:
- BCR48PNH6327XTSA1
Infineon Technologies BCR48PNH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCR48PNH6327XTSA1.
- Factory Lead Time26 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-VSSOP, SC-88, SOT-363
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO 1
- Max Power Dissipation250mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBCR48PN
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA 5V
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Current - Collector (Ic) (Max)70mA 100mA
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage300mV
- Frequency - Transition100MHz 200MHz
- hFE Min70
- Resistor - Base (R1)47k Ω, 2.2k Ω
- Resistor - Emitter Base (R2)47k Ω
- Height800μm
- Length2mm
- Width1.25mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCR48PNH6327XTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet BCR48PNH6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCR48PNH6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet BCR48PNH6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCR48PNH6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BCR48PNH6327XTSA1 More Descriptions
BCR48PN Series NPN/PNP 50 V 70 mA Silicon Digital Transistor Array - SOT-363-6
Trans Digital BJT NPN/PNP 50V 70mA/100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
Transistor: NPN / PNP, bipolar, BRT, complementary, 50V, 70mA
NPN/PNP Silicon Digital Transistor Array, SOT363, RoHSInfineon SCT
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
NPN/PNP Silicon Digital Transistor Array | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Two (galvanic) internal isolated NPN/PNP Transistors in one package; Built in bias resistor NPN: R1 = 47k, R2 = 47k PNP: R1= 2.2k, R2 = 47k; Pb-free (RoHS compliant) package; Qualified according AEC Q101
Trans Digital BJT NPN/PNP 50V 70mA/100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
Transistor: NPN / PNP, bipolar, BRT, complementary, 50V, 70mA
NPN/PNP Silicon Digital Transistor Array, SOT363, RoHSInfineon SCT
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
NPN/PNP Silicon Digital Transistor Array | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Two (galvanic) internal isolated NPN/PNP Transistors in one package; Built in bias resistor NPN: R1 = 47k, R2 = 47k PNP: R1= 2.2k, R2 = 47k; Pb-free (RoHS compliant) package; Qualified according AEC Q101
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