BCR48PNH6327XTSA1

Infineon Technologies BCR48PNH6327XTSA1

Part Number:
BCR48PNH6327XTSA1
Manufacturer:
Infineon Technologies
Ventron No:
2844636-BCR48PNH6327XTSA1
Description:
TRANS NPN/PNP PREBIAS SOT363
ECAD Model:
Datasheet:
BCR48PNH6327XTSA1

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Specifications
Infineon Technologies BCR48PNH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCR48PNH6327XTSA1.
  • Factory Lead Time
    26 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-VSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO 1
  • Max Power Dissipation
    250mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    BCR48PN
  • Number of Elements
    2
  • Polarity
    NPN, PNP
  • Element Configuration
    Dual
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 5mA 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Current - Collector (Ic) (Max)
    70mA 100mA
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    300mV
  • Frequency - Transition
    100MHz 200MHz
  • hFE Min
    70
  • Resistor - Base (R1)
    47k Ω, 2.2k Ω
  • Resistor - Emitter Base (R2)
    47k Ω
  • Height
    800μm
  • Length
    2mm
  • Width
    1.25mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BCR48PNH6327XTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet BCR48PNH6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCR48PNH6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BCR48PNH6327XTSA1 More Descriptions
BCR48PN Series NPN/PNP 50 V 70 mA Silicon Digital Transistor Array - SOT-363-6
Trans Digital BJT NPN/PNP 50V 70mA/100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
Transistor: NPN / PNP, bipolar, BRT, complementary, 50V, 70mA
NPN/PNP Silicon Digital Transistor Array, SOT363, RoHSInfineon SCT
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
NPN/PNP Silicon Digital Transistor Array | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Two (galvanic) internal isolated NPN/PNP Transistors in one package; Built in bias resistor NPN: R1 = 47k, R2 = 47k PNP: R1= 2.2k, R2 = 47k; Pb-free (RoHS compliant) package; Qualified according AEC Q101
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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