Nexperia USA Inc. BCP56TX
- Part Number:
- BCP56TX
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2465032-BCP56TX
- Description:
- TRANS NPN 80V 1A SOT223
- ECAD Model:
-
- Datasheet:
- BCP56TX
Nexperia USA Inc. BCP56TX technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP56TX.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingCut Tape (CT)
- SeriesAutomotive, AEC-Q101
- Published2006
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- Terminal FinishTin (Sn)
- Max Power Dissipation1.35W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count4
- Reference StandardAEC-Q101; IEC-60134
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max1.8W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency155MHz
- Max Breakdown Voltage80V
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
BCP56TX Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The part has a transition frequency of 155MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCP56TX Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 155MHz
BCP56TX Applications
There are a lot of Nexperia USA Inc.
BCP56TX applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The part has a transition frequency of 155MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCP56TX Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 155MHz
BCP56TX Applications
There are a lot of Nexperia USA Inc.
BCP56TX applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP56TX More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
BCP56T Series - 80 V, 1 A NPN medium power transistors
Trans GP BJT NPN 80V 1A 1800mW Automotive 4-Pin(3 Tab) SC-73 T/R
80V 600mW 1A 63@150mA2V 155MHz 500mV@500mA50mA NPN 150¡Í@(Tj) SOT-223-3 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, Bipolar, Aec-Q101, Npn, 80V; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:80V; Transition Frequency Ft:180Mhz; Power Dissipation Pd:650Mw; Dc Collector Current:1A; Dc Current Gain Hfe:40Hfe; Transistor Caserohs Compliant: Yes |Nexperia BCP56TX
BCP56T Series - 80 V, 1 A NPN medium power transistors
Trans GP BJT NPN 80V 1A 1800mW Automotive 4-Pin(3 Tab) SC-73 T/R
80V 600mW 1A 63@150mA2V 155MHz 500mV@500mA50mA NPN 150¡Í@(Tj) SOT-223-3 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, Bipolar, Aec-Q101, Npn, 80V; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:80V; Transition Frequency Ft:180Mhz; Power Dissipation Pd:650Mw; Dc Collector Current:1A; Dc Current Gain Hfe:40Hfe; Transistor Caserohs Compliant: Yes |Nexperia BCP56TX
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