ON Semiconductor BCP56T1G

Name: BCP56T1G
Brand: ON Semiconductor
SKU: 3585303-BCP56T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCP56T1G

Manufacturer:: ON Semiconductor

Ventron No:: 3585303-BCP56T1G

Description:: TRANS NPN 80V 1A SOT223

ECAD Model:

Datasheet:: BCP56T1G

Specifications

ON Semiconductor BCP56T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BCP56T1G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
1A
Frequency
130MHz
Base Part Number
BCP56
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.5W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
130MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
130MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Max Junction Temperature (Tj)
150°C
Height
1.75mm
Length
6.5mm
Width
3.5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCP56T1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 130MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 1A volts.

BCP56T1G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz

BCP56T1G Applications
There are a lot of ON Semiconductor
BCP56T1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCP56T1G More Descriptions

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Bipolar Transistor, Npn, 80V, Sot-223, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BCP56T1G.
TRANSISTOR, NPN, 80V, 1A, SOT-223-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 1A; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -65°C

Certification