Diodes Incorporated BCP5616TC
- Part Number:
- BCP5616TC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3813466-BCP5616TC
- Description:
- TRANS NPN 80V 1A SOT223
- Datasheet:
- BCP56
Diodes Incorporated BCP5616TC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BCP5616TC.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBCP56
- Pin Count4
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product125MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency150MHz
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current1A
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCP5616TC Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCP5616TC Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
BCP5616TC Applications
There are a lot of Diodes Incorporated
BCP5616TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCP5616TC Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
BCP5616TC Applications
There are a lot of Diodes Incorporated
BCP5616TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP5616TC More Descriptions
Trans GP BJT NPN 80V 1A Automotive 4-Pin(3 Tab) SOT-223 T/R
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
BCP56 Series 80 V 1 A NPN 2 W Silicon Planar Medium Power Transistor - SOT-223
Trans, Npn, 80V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCP5616TC
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
BCP56 Series 80 V 1 A NPN 2 W Silicon Planar Medium Power Transistor - SOT-223
Trans, Npn, 80V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCP5616TC
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
14 December 2023
AT24C256 EEPROM Features, Functions, Working Principle, Applications and AT24C256 vs 24LC256
Ⅰ. What is programmable read-only memory?Ⅱ. Overview of AT24C256 EEPROMⅢ. Pin configuration of AT24C256 EEPROMⅣ. What are the features of AT24C256 EEPROM?Ⅴ. Functions of AT24C256 EEPROMⅥ. Working principle... -
14 December 2023
An Introduction to the A3144 Magnetic Hall Effect Sensor
Ⅰ. What is a Hall sensor?Ⅱ. Overview of A3144 Hall effect sensorⅢ. Manufacturer of A3144 Hall effect sensorⅣ. What are the features of A3144 Hall effect sensor?Ⅴ. Pin... -
15 December 2023
Introduction to the Use of Operational Amplifier Circuit Based on LM324
Ⅰ. Overview of LM324 operational amplifierⅡ. Four different packages of LM324 operational amplifierⅢ. Functions of LM324 operational amplifierⅣ. Maximum ratings of LM324 operational amplifierⅤ. Characteristics of LM324 operational... -
15 December 2023
A Comprehensive Guide to Harnessing the Power of the TDA7850 Audio Amplifier
Ⅰ. TDA7850 overviewⅡ. How does the TDA7850 perform in terms of sound quality?Ⅲ. Specifications of TDA7850 audio amplifierⅣ. Electrical characteristic curves of TDA7850 audio amplifierⅤ. What kind of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.