Diodes Incorporated BCP5616TA
- Part Number:
- BCP5616TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464985-BCP5616TA
- Description:
- TRANS NPN 80V 1A SOT223
- Datasheet:
- BCP56
Diodes Incorporated BCP5616TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BCP5616TA.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBCP56
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product125MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current1A
- Height1.65mm
- Length6.55mm
- Width3.55mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCP5616TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
BCP5616TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
BCP5616TA Applications
There are a lot of Diodes Incorporated
BCP5616TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
BCP5616TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
BCP5616TA Applications
There are a lot of Diodes Incorporated
BCP5616TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP5616TA More Descriptions
Trans GP BJT NPN 80V 1A 2000mW 4-Pin(3 Tab) SOT-223 T/R / TRANS NPN 80V 1A SOT223
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
BCP5616 Series NPN 1 A 80 V SMT Silicon Medium Power Transistor - SOT-223
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
BCP5616 Series NPN 1 A 80 V SMT Silicon Medium Power Transistor - SOT-223
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