BCP56-16,135

Nexperia USA Inc. BCP56-16,135

Part Number:
BCP56-16,135
Manufacturer:
Nexperia USA Inc.
Ventron No:
2462713-BCP56-16,135
Description:
TRANS NPN 80V 1A SOT223
ECAD Model:
Datasheet:
BCP56-16,135

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Specifications
Nexperia USA Inc. BCP56-16,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP56-16,135.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.29.00.75
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    BCP56
  • Pin Count
    4
  • Reference Standard
    AEC-Q101; IEC-60134
  • JESD-30 Code
    R-PDSO-G4
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Power - Max
    960mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Current - Collector (Ic) (Max)
    1A
  • Transition Frequency
    180MHz
  • Frequency - Transition
    180MHz
  • RoHS Status
    ROHS3 Compliant
Description
BCP56-16,135 Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 180MHz.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.

BCP56-16,135 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 180MHz


BCP56-16,135 Applications
There are a lot of Nexperia USA Inc.
BCP56-16,135 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BCP56-16,135 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 80V 1A Automotive 4-Pin(3 Tab) SC-73 T/R
80V 650mW 1A 100@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-223-4 Bipolar Transistors - BJT ROHS
BCP Neries 80 V 1 A 1.35 W Surface Mount medium power transistor - SOT-223
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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