Nexperia USA Inc. BCP56-16,135
- Part Number:
- BCP56-16,135
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2462713-BCP56-16,135
- Description:
- TRANS NPN 80V 1A SOT223
- Datasheet:
- BCP56-16,135
Nexperia USA Inc. BCP56-16,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP56-16,135.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.75
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberBCP56
- Pin Count4
- Reference StandardAEC-Q101; IEC-60134
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max960mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)1A
- Transition Frequency180MHz
- Frequency - Transition180MHz
- RoHS StatusROHS3 Compliant
BCP56-16,135 Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 180MHz.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
BCP56-16,135 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 180MHz
BCP56-16,135 Applications
There are a lot of Nexperia USA Inc.
BCP56-16,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 180MHz.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
BCP56-16,135 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 180MHz
BCP56-16,135 Applications
There are a lot of Nexperia USA Inc.
BCP56-16,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP56-16,135 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 80V 1A Automotive 4-Pin(3 Tab) SC-73 T/R
80V 650mW 1A 100@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-223-4 Bipolar Transistors - BJT ROHS
BCP Neries 80 V 1 A 1.35 W Surface Mount medium power transistor - SOT-223
Trans GP BJT NPN 80V 1A Automotive 4-Pin(3 Tab) SC-73 T/R
80V 650mW 1A 100@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-223-4 Bipolar Transistors - BJT ROHS
BCP Neries 80 V 1 A 1.35 W Surface Mount medium power transistor - SOT-223
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