Nexperia USA Inc. BCP56-16,115

Name: BCP56-16,115
Brand: Nexperia USA Inc.
SKU: 2462717-BCP56-16,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCP56-16,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2462717-BCP56-16,115

Description:: TRANS NPN 80V 1A SOT223

ECAD Model:

Datasheet:: BCP56-16,115

Specifications

Nexperia USA Inc. BCP56-16,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP56-16,115.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
BCP56
Pin Count
4
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
960mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Transition Frequency
180MHz
Frequency - Transition
180MHz
RoHS Status
ROHS3 Compliant

Description

BCP56-16,115 Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 180MHz.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.

BCP56-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 180MHz

BCP56-16,115 Applications
There are a lot of Nexperia USA Inc.
BCP56-16,115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCP56-16,115 More Descriptions

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
BCP56 Series 80 V 1 A SMT NPN Medium Power Transistor - SOT-223
Trans GP BJT NPN 80V 1A Automotive 4-Pin(3 Tab) SC-73 T/R
80V 650mW 1A 100@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 1 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 250 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 650 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1

Certification