ON Semiconductor BCP56-10T1G

Name: BCP56-10T1G
Brand: ON Semiconductor
SKU: 2464846-BCP56-10T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCP56-10T1G

Manufacturer:: ON Semiconductor

Ventron No:: 2464846-BCP56-10T1G

Description:: TRANS NPN 80V 1A SOT-223

ECAD Model:

Datasheet:: BCP56-10T1G

Specifications

ON Semiconductor BCP56-10T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BCP56-10T1G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
130MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BCP56
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.5W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
130MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
130MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Height
1.65mm
Length
6.7mm
Width
3.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCP56-10T1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 130MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

BCP56-10T1G Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz

BCP56-10T1G Applications
There are a lot of ON Semiconductor
BCP56-10T1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCP56-10T1G More Descriptions

ON Semi BCP56-10T1G NPN Bipolar Transistor, 1 A, 80 V SOT-223 | ON Semiconductor BCP56-10T1G
80V 1.5W 63@150mA,2V 1A NPN SOT-223 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 80V 1A 1500mW 4-Pin(3 Tab) SOT-223 T/R / TRANS NPN 80V 1A SOT-223
1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 63 to 160
BCP Series 80 V 1.5 A Surface Mount NPN Silicon Epitaxial Transistor - SOT-223
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Transistor, BIPOL, NPN, 80V, SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:130MHz; Power
These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Transition Frequency:130Mhz; Dc Current Gain Hfe Min:63Hfe Rohs Compliant: Yes |Onsemi BCP56-10T1G.
TRANS, BIPOL, NPN, 80V, SOT223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 1A; DC Current Gain hFE: 63hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: BCxxx Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Certification