Nexperia USA Inc. BCP56,115

Name: BCP56,115
Brand: Nexperia USA Inc.
SKU: 2463093-BCP56,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCP56,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2463093-BCP56,115

Description:: TRANS NPN 80V 1A SOT223

ECAD Model:

Datasheet:: BCP56,115

Specifications

Nexperia USA Inc. BCP56,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP56,115.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
BCP56
Pin Count
4
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
960mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Transition Frequency
180MHz
Frequency - Transition
180MHz
RoHS Status
ROHS3 Compliant

Description

BCP56,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.A transition frequency of 180MHz is present in the part.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.

BCP56,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 180MHz

BCP56,115 Applications
There are a lot of Nexperia USA Inc.
BCP56,115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCP56,115 More Descriptions

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 80V 1A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
BCP56 Series 80 V 1 A NPN Medium Power Transistor - SOT-223
80V 650mW 1A 63@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:63; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)

Certification