Nexperia USA Inc. BCP55-16,115

Name: BCP55-16,115
Brand: Nexperia USA Inc.
SKU: 2463066-BCP55-16,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCP55-16,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2463066-BCP55-16,115

Description:: TRANS NPN 60V 1A SOT-223

ECAD Model:

Datasheet:: BCP55-16,115

Specifications

Nexperia USA Inc. BCP55-16,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP55-16,115.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BCP55
Pin Count
4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1.35W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
1A
Transition Frequency
130MHz
Frequency - Transition
180MHz
Power Dissipation Ambient-Max
1.5W
RoHS Status
ROHS3 Compliant

Description

BCP55-16,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.A transition frequency of 130MHz is present in the part.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.

BCP55-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 130MHz

BCP55-16,115 Applications
There are a lot of Nexperia USA Inc.
BCP55-16,115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCP55-16,115 More Descriptions

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Bipolar junction transistor, NPN, 1 A, 60 V, SMD, TO-261, BCP55-16,115
BCP55 Series 60 V 1 A Surface Mount NPN Power Transistor - SOT-223
Trans GP BJT NPN 60V 1A 1350mW Automotive 4-Pin(3 Tab) SC-73 T/R
60V 650mW 1A 100@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:180MHz; Power Dissipation Pd:640mW; DC Collector Current:1A; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes

Certification