Nexperia USA Inc. BCP55-10,115

Name: BCP55-10,115
Brand: Nexperia USA Inc.
SKU: 2846094-BCP55-10,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCP55-10,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2846094-BCP55-10,115

Description:: TRANS NPN 60V 1A SOT223

ECAD Model:

Datasheet:: BCP55-10,115

Specifications

Nexperia USA Inc. BCP55-10,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP55-10,115.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BCP55
Pin Count
4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1.35W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
1A
Transition Frequency
130MHz
Frequency - Transition
180MHz
Power Dissipation Ambient-Max
1.5W
RoHS Status
ROHS3 Compliant

Description

BCP55-10,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.A transition frequency of 130MHz is present in the part.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.

BCP55-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 130MHz

BCP55-10,115 Applications
There are a lot of Nexperia USA Inc.
BCP55-10,115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCP55-10,115 More Descriptions

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
On a Reel of 1000, Nexperia BCP55-10, 115 NPN Transistor, 1 A, 60 V, 4-Pin SOT-223
60V 1.35W 1A NPN SOT-223 Bipolar Transistors - BJT ROHS
BCP55 Series 60 V 1 A Surface Mount NPN Medium Power Transistor - SOT-223
Trans GP BJT NPN 60V 1A 1350mW Automotive 4-Pin(3 Tab) SC-73 T/R
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:180MHz; Power Dissipation Pd:640mW; DC Collector Current:1A; DC Current Gain Max (hfe):63 ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 180MHz; Power Dissipation Pd: 640mW; DC Collector Current: 1A; DC Current Gain hFE: 63hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: BCP55 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Av Current Ic: 1A; Collector Emitter Saturation Voltage Vce(on): 500mV; Continuous Collector Current Ic Max: 1A; Current Ic Continuous a Max: 1A; Current Ic hFE: 15µA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Typ: 130MHz; Hfe Min: 63; No. of Transistors: 1; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 1.37W; Voltage Vcbo: 60V

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