Nexperia USA Inc. BCP54-16,115
- Part Number:
- BCP54-16,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2463126-BCP54-16,115
- Description:
- TRANS NPN 45V 1A SOT223
- Datasheet:
- BCP54-16,115
Nexperia USA Inc. BCP54-16,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP54-16,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Base Part NumberBCP54
- Pin Count4
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max960mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)1A
- Transition Frequency180MHz
- Frequency - Transition180MHz
- Power Dissipation-Max (Abs)1.35W
- VCEsat-Max0.5 V
- RoHS StatusROHS3 Compliant
BCP54-16,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 180MHz.The device has a 45V maximal voltage - Collector Emitter Breakdown.
BCP54-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 180MHz
BCP54-16,115 Applications
There are a lot of Nexperia USA Inc.
BCP54-16,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 180MHz.The device has a 45V maximal voltage - Collector Emitter Breakdown.
BCP54-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 180MHz
BCP54-16,115 Applications
There are a lot of Nexperia USA Inc.
BCP54-16,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP54-16,115 More Descriptions
Trans GP BJT NPN 45V 1A 1350mW Automotive 4-Pin(3 Tab) SC-73 T/R / TRANS NPN 45V 1A SOT223
Bipolar junction transistor, NPN, 1 A, 45 V, SMD, TO-261, BCP54-16,115
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
NEXPERIA - BCP54-16,115 - Transistor Singolo Bipolare (BJT), NPN, 45 V, 180 MHz, 640 mW, 1 A, 100 hFE
45V 650mW 1A 100@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:180MHz; Power Dissipation Pd:640mW; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)
Bipolar junction transistor, NPN, 1 A, 45 V, SMD, TO-261, BCP54-16,115
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
NEXPERIA - BCP54-16,115 - Transistor Singolo Bipolare (BJT), NPN, 45 V, 180 MHz, 640 mW, 1 A, 100 hFE
45V 650mW 1A 100@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:180MHz; Power Dissipation Pd:640mW; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)
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