BCP54-16,115

Nexperia USA Inc. BCP54-16,115

Part Number:
BCP54-16,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
2463126-BCP54-16,115
Description:
TRANS NPN 45V 1A SOT223
ECAD Model:
Datasheet:
BCP54-16,115

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Specifications
Nexperia USA Inc. BCP54-16,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP54-16,115.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Surface Mount
    YES
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Base Part Number
    BCP54
  • Pin Count
    4
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Power - Max
    960mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    45V
  • Current - Collector (Ic) (Max)
    1A
  • Transition Frequency
    180MHz
  • Frequency - Transition
    180MHz
  • Power Dissipation-Max (Abs)
    1.35W
  • VCEsat-Max
    0.5 V
  • RoHS Status
    ROHS3 Compliant
Description
BCP54-16,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 180MHz.The device has a 45V maximal voltage - Collector Emitter Breakdown.

BCP54-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 180MHz


BCP54-16,115 Applications
There are a lot of Nexperia USA Inc.
BCP54-16,115 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BCP54-16,115 More Descriptions
Trans GP BJT NPN 45V 1A 1350mW Automotive 4-Pin(3 Tab) SC-73 T/R / TRANS NPN 45V 1A SOT223
Bipolar junction transistor, NPN, 1 A, 45 V, SMD, TO-261, BCP54-16,115
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
NEXPERIA - BCP54-16,115 - Transistor Singolo Bipolare (BJT), NPN, 45 V, 180 MHz, 640 mW, 1 A, 100 hFE
45V 650mW 1A 100@150mA,2V 180MHz 500mV@500mA,50mA NPN 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:180MHz; Power Dissipation Pd:640mW; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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