Nexperia USA Inc. BCP53TX
- Part Number:
- BCP53TX
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845748-BCP53TX
- Description:
- TRANS PNP 80V 1A SOT223
- Datasheet:
- BCP53TX
Nexperia USA Inc. BCP53TX technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP53TX.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingCut Tape (CT)
- SeriesAutomotive, AEC-Q101
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- Max Power Dissipation1.35W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- Reference StandardAEC-Q101; IEC-60134
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max1.35W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency140MHz
- Max Breakdown Voltage80V
- Frequency - Transition145MHz
- RoHS StatusROHS3 Compliant
BCP53TX Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The part has a transition frequency of 140MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCP53TX Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 140MHz
BCP53TX Applications
There are a lot of Nexperia USA Inc.
BCP53TX applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The part has a transition frequency of 140MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCP53TX Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 140MHz
BCP53TX Applications
There are a lot of Nexperia USA Inc.
BCP53TX applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP53TX More Descriptions
In a Pack of 100, Nexperia BCP53TX PNP Transistor, -1 A, -80 V, 3-Pin SC-73, SOT223
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
BCP53 Series 1 A SMT PNP Medium Power Transistor - SOT-223
Trans GP BJT PNP 80V 1A 1800mW Automotive 4-Pin(3 Tab) SC-73
BCP53T Series - 80 V, 1 A PNP medium power transistors
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, Bipolar, Aec-Q101, Pnp, -80V; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-80V; Transition Frequency Ft:145Mhz; Power Dissipation Pd:650Mw; Dc Collector Current:-1A; Dc Current Gain Hfe:40Hfe; Transistor Rohs Compliant: Yes |Nexperia BCP53TX
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
BCP53 Series 1 A SMT PNP Medium Power Transistor - SOT-223
Trans GP BJT PNP 80V 1A 1800mW Automotive 4-Pin(3 Tab) SC-73
BCP53T Series - 80 V, 1 A PNP medium power transistors
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, Bipolar, Aec-Q101, Pnp, -80V; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-80V; Transition Frequency Ft:145Mhz; Power Dissipation Pd:650Mw; Dc Collector Current:-1A; Dc Current Gain Hfe:40Hfe; Transistor Rohs Compliant: Yes |Nexperia BCP53TX
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