BCP53TX

Nexperia USA Inc. BCP53TX

Part Number:
BCP53TX
Manufacturer:
Nexperia USA Inc.
Ventron No:
2845748-BCP53TX
Description:
TRANS PNP 80V 1A SOT223
ECAD Model:
Datasheet:
BCP53TX

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Specifications
Nexperia USA Inc. BCP53TX technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP53TX.
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Cut Tape (CT)
  • Series
    Automotive, AEC-Q101
  • Published
    2011
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Max Power Dissipation
    1.35W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    4
  • Reference Standard
    AEC-Q101; IEC-60134
  • JESD-30 Code
    R-PDSO-G4
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Power - Max
    1.35W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    500mV
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    140MHz
  • Max Breakdown Voltage
    80V
  • Frequency - Transition
    145MHz
  • RoHS Status
    ROHS3 Compliant
Description
BCP53TX Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The part has a transition frequency of 140MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

BCP53TX Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 140MHz


BCP53TX Applications
There are a lot of Nexperia USA Inc.
BCP53TX applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BCP53TX More Descriptions
In a Pack of 100, Nexperia BCP53TX PNP Transistor, -1 A, -80 V, 3-Pin SC-73, SOT223
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
BCP53 Series 1 A SMT PNP Medium Power Transistor - SOT-223
Trans GP BJT PNP 80V 1A 1800mW Automotive 4-Pin(3 Tab) SC-73
BCP53T Series - 80 V, 1 A PNP medium power transistors
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, Bipolar, Aec-Q101, Pnp, -80V; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-80V; Transition Frequency Ft:145Mhz; Power Dissipation Pd:650Mw; Dc Collector Current:-1A; Dc Current Gain Hfe:40Hfe; Transistor Rohs Compliant: Yes |Nexperia BCP53TX
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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