ON Semiconductor BCP53T1G

Name: BCP53T1G
Brand: ON Semiconductor
SKU: 2463071-BCP53T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCP53T1G

Manufacturer:: ON Semiconductor

Ventron No:: 2463071-BCP53T1G

Description:: TRANS PNP 80V 1.5A SOT223

ECAD Model:

Datasheet:: BCP53T1G

Specifications

ON Semiconductor BCP53T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BCP53T1G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
1.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-15A
Frequency
50MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BCP53
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.5W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
-80V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Height
1.651mm
Length
6.6802mm
Width
3.7084mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCP53T1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.

BCP53T1G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 50MHz

BCP53T1G Applications
There are a lot of ON Semiconductor
BCP53T1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCP53T1G More Descriptions

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Bjt, Pnp, -80V. Sot-223, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:1.5A; Power Dissipation:1.5W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi BCP53T1G.
TRANSISTOR, PNP, -80V, -1.5A, SOT-223-4; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 1.5W; DC Collector Current: -1.5A; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -65°C

Certification