Infineon Technologies BCP5316E6433HTMA1
- Part Number:
- BCP5316E6433HTMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3585568-BCP5316E6433HTMA1
- Description:
- TRANS PNP 80V 1A SOT-223
- Datasheet:
- BCP5316E6433HTMA1
Infineon Technologies BCP5316E6433HTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCP5316E6433HTMA1.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Base Part NumberBCP53
- Reference StandardAEC-Q101
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max2W
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency125MHz
- Frequency - Transition125MHz
- RoHS StatusRoHS Compliant
BCP5316E6433HTMA1 Overview
DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.As a result, the part has a transition frequency of 125MHz.In extreme cases, the collector current can be as low as 1A volts.
BCP5316E6433HTMA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 125MHz
BCP5316E6433HTMA1 Applications
There are a lot of Infineon Technologies
BCP5316E6433HTMA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.As a result, the part has a transition frequency of 125MHz.In extreme cases, the collector current can be as low as 1A volts.
BCP5316E6433HTMA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 125MHz
BCP5316E6433HTMA1 Applications
There are a lot of Infineon Technologies
BCP5316E6433HTMA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP5316E6433HTMA1 More Descriptions
Trans GP BJT PNP 80V 1A 4-Pin(3 Tab) SOT-223 T/R
Cap Ceramic 2pF 100V C0G 0.1pF SMD 0603 125°C Paper T/R
Cap Ceramic 2pF 100V C0G 0.1pF SMD 0603 125°C Paper T/R
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