Fairchild/ON Semiconductor BCP53
- Part Number:
- BCP53
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2462886-BCP53
- Description:
- TRANS PNP 80V 1.2A SOT-223
- ECAD Model:
-
- Datasheet:
- BCP53
Fairchild/ON Semiconductor BCP53 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BCP53.
- Lifecycle StatusLIFETIME (Last Updated: 5 days ago)
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Weight188mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-80V
- Max Power Dissipation1.5W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-1.2A
- Base Part NumberBCP53
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.5W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-80V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Current - Collector (Ic) (Max)1.2A
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)-100V
- Emitter Base Voltage (VEBO)-5V
- hFE Min25
- Max Junction Temperature (Tj)150°C
- Height1.75mm
- Length6.5mm
- Width3.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCP53 Description
The BCP53 is a SOT223 surface-mount plastic package that houses a 1A PNP Medium Power Transistor. It has a heat sink that is exposed for optimum thermal and electrical conductivity. It's built for medium-power surface-mounting applications.
BCP53 Features
High Current: 1.5 Amps
NPN Complement is BCP56
Pb-Free Packages are Available
High power dissipation capability
The SOT‐223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die
BCP53 Applications
Amplifiers
MOSFET drivers
High-side switches
Power management
Battery-driven devices
Linear voltage regulators
The BCP53 is a SOT223 surface-mount plastic package that houses a 1A PNP Medium Power Transistor. It has a heat sink that is exposed for optimum thermal and electrical conductivity. It's built for medium-power surface-mounting applications.
BCP53 Features
High Current: 1.5 Amps
NPN Complement is BCP56
Pb-Free Packages are Available
High power dissipation capability
The SOT‐223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die
BCP53 Applications
Amplifiers
MOSFET drivers
High-side switches
Power management
Battery-driven devices
Linear voltage regulators
BCP53 More Descriptions
80V 1.3W 250@150mA,2V 1A PNP SOT-223 Bipolar Transistors - BJT ROHS
BCP53 Series 80 V 1.2 A 0.65 W SMT PNP General Purpose Amplifier - SOT-223
Bipolar Transistors - BJT SOT-223 PNP GP AMP
Power Bipolar Transistor, 1.2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Power Dissipation, Pd:1.5W; DC Current Gain Min (hfe):25; Package/Case:SOT-223; C-E Breakdown Voltage:80V; DC Collector Current:1.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78. See BCP52 for characteristics.
BCP53 Series 80 V 1.2 A 0.65 W SMT PNP General Purpose Amplifier - SOT-223
Bipolar Transistors - BJT SOT-223 PNP GP AMP
Power Bipolar Transistor, 1.2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Power Dissipation, Pd:1.5W; DC Current Gain Min (hfe):25; Package/Case:SOT-223; C-E Breakdown Voltage:80V; DC Collector Current:1.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78. See BCP52 for characteristics.
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