Nexperia USA Inc. BCP53-10,115
- Part Number:
- BCP53-10,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2846108-BCP53-10,115
- Description:
- TRANS PNP 80V 1A SOT223
- Datasheet:
- BCP53-10,115
Nexperia USA Inc. BCP53-10,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP53-10,115.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Max Power Dissipation1W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Frequency145MHz
- Base Part NumberBCP53
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.35W
- Case ConnectionCOLLECTOR
- Power - Max1W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product145MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency145MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min63
- Height1.7mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCP53-10,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 145MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP53-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCP53-10,115 Applications
There are a lot of Nexperia USA Inc.
BCP53-10,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 145MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP53-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCP53-10,115 Applications
There are a lot of Nexperia USA Inc.
BCP53-10,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP53-10,115 More Descriptions
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
BCP53 Series 80 V 1 A SMT PNP Silicon Epitaxial Transistor - SOT-223
Trans GP BJT PNP 80V 1A 1350mW Automotive 4-Pin(3 Tab) SC-73 T/R
80V 650mW 1A 63@150mA,2V 145MHz 500mV@500mA,50mA PNP 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency Typ, ft:145MHz; Power Dissipation Pd:650mW; DC Collector Current:-1A; DC Current Gain Max (hfe):63 ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT-223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 145MHz; Power Dissipation Pd: 650mW; DC Collector Current: 1A; DC Current Gain hFE: 63hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: BCP53 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Av Current Ic: 1A; Collector Emitter Saturation Voltage Vce(on): -500mV; Continuous Collector Current Ic Max: 1A; Current Ic Continuous a Max: 1A; Current Ic hFE: 15µA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Typ: 115MHz; Hfe Min: 63; No. of Transistors: 1; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 1.37W; Voltage Vcbo: 100V
BCP53 Series 80 V 1 A SMT PNP Silicon Epitaxial Transistor - SOT-223
Trans GP BJT PNP 80V 1A 1350mW Automotive 4-Pin(3 Tab) SC-73 T/R
80V 650mW 1A 63@150mA,2V 145MHz 500mV@500mA,50mA PNP 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency Typ, ft:145MHz; Power Dissipation Pd:650mW; DC Collector Current:-1A; DC Current Gain Max (hfe):63 ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT-223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 145MHz; Power Dissipation Pd: 650mW; DC Collector Current: 1A; DC Current Gain hFE: 63hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: BCP53 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Av Current Ic: 1A; Collector Emitter Saturation Voltage Vce(on): -500mV; Continuous Collector Current Ic Max: 1A; Current Ic Continuous a Max: 1A; Current Ic hFE: 15µA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Typ: 115MHz; Hfe Min: 63; No. of Transistors: 1; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 1.37W; Voltage Vcbo: 100V
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