BCP53-10,115

Nexperia USA Inc. BCP53-10,115

Part Number:
BCP53-10,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
2846108-BCP53-10,115
Description:
TRANS PNP 80V 1A SOT223
ECAD Model:
Datasheet:
BCP53-10,115

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Specifications
Nexperia USA Inc. BCP53-10,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCP53-10,115.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Max Power Dissipation
    1W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Frequency
    145MHz
  • Base Part Number
    BCP53
  • Pin Count
    4
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.35W
  • Case Connection
    COLLECTOR
  • Power - Max
    1W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    145MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    63 @ 150mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    145MHz
  • Collector Emitter Saturation Voltage
    500mV
  • Max Breakdown Voltage
    80V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    63
  • Height
    1.7mm
  • Length
    6.7mm
  • Width
    3.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BCP53-10,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 145MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.

BCP53-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz


BCP53-10,115 Applications
There are a lot of Nexperia USA Inc.
BCP53-10,115 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BCP53-10,115 More Descriptions
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
BCP53 Series 80 V 1 A SMT PNP Silicon Epitaxial Transistor - SOT-223
Trans GP BJT PNP 80V 1A 1350mW Automotive 4-Pin(3 Tab) SC-73 T/R
80V 650mW 1A 63@150mA,2V 145MHz 500mV@500mA,50mA PNP 150¡æ@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency Typ, ft:145MHz; Power Dissipation Pd:650mW; DC Collector Current:-1A; DC Current Gain Max (hfe):63 ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT-223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 145MHz; Power Dissipation Pd: 650mW; DC Collector Current: 1A; DC Current Gain hFE: 63hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: BCP53 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Av Current Ic: 1A; Collector Emitter Saturation Voltage Vce(on): -500mV; Continuous Collector Current Ic Max: 1A; Current Ic Continuous a Max: 1A; Current Ic hFE: 15µA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Typ: 115MHz; Hfe Min: 63; No. of Transistors: 1; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 1.37W; Voltage Vcbo: 100V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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