Diodes Incorporated BCP5216TA
- Part Number:
- BCP5216TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464255-BCP5216TA
- Description:
- TRANS PNP 60V 1A SOT223
- Datasheet:
- BCP5216TA
Diodes Incorporated BCP5216TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BCP5216TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBCP52
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product125MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Height1.65mm
- Length6.55mm
- Width3.55mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BCP5216TA Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
BCP5216TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5216TA Applications
There are a lot of Diodes Incorporated
BCP5216TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
BCP5216TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5216TA Applications
There are a lot of Diodes Incorporated
BCP5216TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCP5216TA More Descriptions
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
BCP52 Series PNP 2 W 60 V 1 A Surface Mount Power Transistor - SOT-223
Trans GP BJT PNP 60V 1A Automotive 4-Pin(3 Tab) SOT-223 T/R
Trans GP BJT PNP 60V 1A 4Pin SOT223 | Diodes Inc BCP5216TA
Trans, Pnp, 60V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCP5216TA
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = -1 / Collector-Emitter Voltage (Vceo) V = -60 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = -60 / Emitter-Base Voltage (Vebo) V = -5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 150 / Power Dissipation (Pd) W = 2 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = -0.5 / Reflow Temperature Max. °C = 260
BCP52 Series PNP 2 W 60 V 1 A Surface Mount Power Transistor - SOT-223
Trans GP BJT PNP 60V 1A Automotive 4-Pin(3 Tab) SOT-223 T/R
Trans GP BJT PNP 60V 1A 4Pin SOT223 | Diodes Inc BCP5216TA
Trans, Pnp, 60V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. BCP5216TA
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = -1 / Collector-Emitter Voltage (Vceo) V = -60 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = -60 / Emitter-Base Voltage (Vebo) V = -5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 150 / Power Dissipation (Pd) W = 2 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = -0.5 / Reflow Temperature Max. °C = 260
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