Fairchild/ON Semiconductor BCP52

BCP52 Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1.2A).An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 1.2A volts.

BCP52 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.2A


BCP52 Applications
There are a lot of ON Semiconductor
BCP52 applications of single BJT transistors.


Inverter
Interface
Driver
Muting