ON Semiconductor BC859CLT1

Name: BC859CLT1
Brand: ON Semiconductor
SKU: 2468378-BC859CLT1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC859CLT1

Manufacturer:: ON Semiconductor

Ventron No:: 2468378-BC859CLT1

Description:: TRANS PNP 30V 0.1A SOT-23

ECAD Model:

Datasheet:: BC859CLT1

Specifications

ON Semiconductor BC859CLT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC859CLT1.

Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
300mW
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
JEDEC-95 Code
TO-236AB
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
Non-RoHS Compliant

Description

BC859CLT1 Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.

BC859CLT1 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz

BC859CLT1 Applications
There are a lot of Rochester Electronics, LLC
BC859CLT1 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC859CLT1 More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans GP BJT PNP 30V 0.1A 3-Pin SOT-23 T/R
BC859CLT1, SINGLE BIPOLAR TRANSISTORS;
French Electronic Distributor since 1988

Certification