BC858W,135

Nexperia USA Inc. BC858W,135

Part Number:
BC858W,135
Manufacturer:
Nexperia USA Inc.
Ventron No:
3553837-BC858W,135
Description:
TRANS PNP 30V 0.1A SOT323
ECAD Model:
Datasheet:
BC858W,135

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Specifications
Nexperia USA Inc. BC858W,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC858W,135.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2009
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Power Dissipation
    200mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    100MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BC858
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    200mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    30V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    125 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    30V
  • Transition Frequency
    100MHz
  • Collector Base Voltage (VCBO)
    30V
  • Emitter Base Voltage (VEBO)
    5V
  • Collector-Base Capacitance-Max
    5pF
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
BC858W,135 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 125 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BC858W,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


BC858W,135 Applications
There are a lot of Nexperia USA Inc.
BC858W,135 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC858W,135 More Descriptions
BC856W; BC857W; BC858W - 65 V, 100 mA PNP general-purpose transistors
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC858W,135
Trans GP BJT PNP 65V 0.1A 200mW Automotive 3-Pin SC-70 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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