Nexperia USA Inc. BC858W,135
- Part Number:
- BC858W,135
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3553837-BC858W,135
- Description:
- TRANS PNP 30V 0.1A SOT323
- Datasheet:
- BC858W,135
Nexperia USA Inc. BC858W,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC858W,135.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC858
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce125 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency100MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)5V
- Collector-Base Capacitance-Max5pF
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BC858W,135 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 125 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC858W,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC858W,135 Applications
There are a lot of Nexperia USA Inc.
BC858W,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 125 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC858W,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC858W,135 Applications
There are a lot of Nexperia USA Inc.
BC858W,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC858W,135 More Descriptions
BC856W; BC857W; BC858W - 65 V, 100 mA PNP general-purpose transistors
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC858W,135
Trans GP BJT PNP 65V 0.1A 200mW Automotive 3-Pin SC-70 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC858W,135
Trans GP BJT PNP 65V 0.1A 200mW Automotive 3-Pin SC-70 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
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