Diodes Incorporated BC858CW-7-F

Name: BC858CW-7-F
Brand: Diodes Incorporated
SKU: 2845673-BC858CW-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC858CW-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 2845673-BC858CW-7-F

Description:: TRANS PNP 30V 0.1A SC70-3

ECAD Model:

Datasheet:: BC858CW-7-F

Specifications

Diodes Incorporated BC858CW-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC858CW-7-F.

Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
200MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC858
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-650mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

BC858CW-7-F Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 200MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.

BC858CW-7-F Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

BC858CW-7-F Applications
There are a lot of Diodes Incorporated
BC858CW-7-F applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC858CW-7-F More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Trans, Pnp, 30V, 0.1A, 150Deg C, 0.2W Rohs Compliant: Yes |Diodes Inc. BC858CW-7-F
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BC858 Series 30 V 200 mA PNP Surface Mount Silicon Transistor - SOT-323

Certification