ON Semiconductor BC858BLT1G

Name: BC858BLT1G
Brand: ON Semiconductor
SKU: 2462824-BC858BLT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC858BLT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2462824-BC858BLT1G

Description:: TRANS PNP 30V 0.1A SOT23

ECAD Model:

Datasheet:: BC858BLT1G

Specifications

ON Semiconductor BC858BLT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC858BLT1G.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-100mA
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
225mW
Power - Max
300mW
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-650mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
220
Height
940μm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC858BLT1G Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -650mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -100mA.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 30V volts.The maximum collector current is 100mA volts.

BC858BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz

BC858BLT1G Applications
There are a lot of ON Semiconductor
BC858BLT1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC858BLT1G More Descriptions

ON Semi BC858BLT1G PNP Bipolar Transistor; 0.1 A; 30 V; 3-Pin SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
BC Series 30 V 100 mA SMT PNP Silicon General Purpose Transistor - SOT-23
Trans GP BJT PNP 30V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
TRANSISTOR, PNP, SOT-23, FULL REEL; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 225mW; DC Collector Current: 100mA; DC Current Gain hFE: 100hFE; Tra
Bipolar Transistor, Pnp -30V Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:30V; Continuous Collector Current:100Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BC858BLT1G.

Certification