BC858AWT1

ON Semiconductor BC858AWT1

Part Number:
BC858AWT1
Manufacturer:
ON Semiconductor
Ventron No:
2468141-BC858AWT1
Description:
TRANS PNP 30V 0.1A SOT-323
ECAD Model:
Datasheet:
BC856,7,8(A,BWT1)

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Specifications
ON Semiconductor BC858AWT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC858AWT1.
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    150mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    125 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    100MHz
  • Frequency - Transition
    100MHz
  • RoHS Status
    Non-RoHS Compliant
Description
BC858AWT1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 100MHz in the part.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BC858AWT1 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz


BC858AWT1 Applications
There are a lot of Rochester Electronics, LLC
BC858AWT1 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC858AWT1 More Descriptions
Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 125 @ 2mA 5V 100mA 150mW 100MHz
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
100 mA, 30V PNP Bipolar Junction Transistor
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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