ON Semiconductor BC858AWT1
- Part Number:
- BC858AWT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2468141-BC858AWT1
- Description:
- TRANS PNP 30V 0.1A SOT-323
- Datasheet:
- BC856,7,8(A,BWT1)
ON Semiconductor BC858AWT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC858AWT1.
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max150mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce125 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusNon-RoHS Compliant
BC858AWT1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 100MHz in the part.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BC858AWT1 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC858AWT1 Applications
There are a lot of Rochester Electronics, LLC
BC858AWT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 100MHz in the part.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BC858AWT1 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC858AWT1 Applications
There are a lot of Rochester Electronics, LLC
BC858AWT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC858AWT1 More Descriptions
Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 125 @ 2mA 5V 100mA 150mW 100MHz
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
100 mA, 30V PNP Bipolar Junction Transistor
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
100 mA, 30V PNP Bipolar Junction Transistor
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