ON Semiconductor BC858ALT1G
- Part Number:
- BC858ALT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845259-BC858ALT1G
- Description:
- TRANS PNP 30V 0.1A SOT-23
- Datasheet:
- BC858ALT1G
ON Semiconductor BC858ALT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC858ALT1G.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-100mA
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce125 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-650mV
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)5V
- hFE Min125
- Height1.11mm
- Length3.04mm
- Width2.64mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC858ALT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC858ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858ALT1G Applications
There are a lot of ON Semiconductor
BC858ALT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC858ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858ALT1G Applications
There are a lot of ON Semiconductor
BC858ALT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC858ALT1G More Descriptions
ON Semi BC858ALT1G PNP Bipolar Transistor, 0.1 A, 30 V, 3-Pin SOT-23 | ON Semiconductor BC858ALT1G
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
30V 300mW 125@2mA,5V 100mA PNP SOT-23-3 Bipolar Transistors - BJT ROHS
BC Series 30 V 100 mA SMT PNP Silicon General Purpose Transistor - SOT-23
Trans GP BJT PNP 30V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
Transistor, BIPOL, PNP, -30V, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:100MHz; Power
Bipolar Transistor, Pnp -30V Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:30V; Continuous Collector Current:100Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BC858ALT1G
TRANS, BIPOL, PNP, -30V, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -30V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 225mW; DC Collector Current: -100mA; DC Current Gain hFE: 90hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
30V 300mW 125@2mA,5V 100mA PNP SOT-23-3 Bipolar Transistors - BJT ROHS
BC Series 30 V 100 mA SMT PNP Silicon General Purpose Transistor - SOT-23
Trans GP BJT PNP 30V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
Transistor, BIPOL, PNP, -30V, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:100MHz; Power
Bipolar Transistor, Pnp -30V Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:30V; Continuous Collector Current:100Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BC858ALT1G
TRANS, BIPOL, PNP, -30V, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -30V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 225mW; DC Collector Current: -100mA; DC Current Gain hFE: 90hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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