Nexperia USA Inc. BC857W,115

Name: BC857W,115
Brand: Nexperia USA Inc.
SKU: 2463835-BC857W,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC857W,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2463835-BC857W,115

Description:: TRANS PNP 45V 0.1A SOT323

ECAD Model:

Datasheet:: BC857W,115

Specifications

Nexperia USA Inc. BC857W,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC857W,115.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2008
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.21.00.95
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC857
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
200mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
100MHz
Frequency - Transition
100MHz
VCEsat-Max
0.65 V
Collector-Base Capacitance-Max
5pF
RoHS Status
ROHS3 Compliant

Description

BC857W,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 125 @ 2mA 5V.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 100MHz.The device has a 45V maximal voltage - Collector Emitter Breakdown.

BC857W,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 100MHz

BC857W,115 Applications
There are a lot of Nexperia USA Inc.
BC857W,115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC857W,115 More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
BC856W; BC857W; BC858W - 65 V, 100 mA PNP general-purpose transistors
BC857 Series 45 V 100 mA 200 mW PNP SMT General Purpose Transistor - SOT-323
Trans GP BJT PNP 65V 0.1A 200mW Automotive 3-Pin SC-70 T/R
Transistor, PNP, -45V, 100MHZ, SOT-323-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power
TRANSISTOR, PNP, 45V, 0.1A, SOT-323; Transistor Polarity:PNP; Collector Emitter Voltage Max:45V; Continuous Collector Current:100mA; Power Dissipation:200mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
TRANS, PNP, -45V, 100MHZ, SOT-323-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 800hFE; RF Transistor Case: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

Certification