BC857CWT1

ON Semiconductor BC857CWT1

Part Number:
BC857CWT1
Manufacturer:
ON Semiconductor
Ventron No:
2468103-BC857CWT1
Description:
TRANS PNP 45V 0.1A SOT-323
ECAD Model:
Datasheet:
BC856,7,8(A,BWT1)

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Specifications
ON Semiconductor BC857CWT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC857CWT1.
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    150mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    420 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    45V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    100MHz
  • Frequency - Transition
    100MHz
  • RoHS Status
    Non-RoHS Compliant
Description
BC857CWT1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 100MHz in the part.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BC857CWT1 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz


BC857CWT1 Applications
There are a lot of Rochester Electronics, LLC
BC857CWT1 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC857CWT1 More Descriptions
45 V, 100 mA, PNP Bipolar Junction Transistor
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
BC857CWT1, SINGLE BIPOLAR TRANSISTORS;
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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