BC857CW,115

Nexperia USA Inc. BC857CW,115

Part Number:
BC857CW,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
2463102-BC857CW,115
Description:
TRANS PNP 45V 0.1A SOT323
ECAD Model:
Datasheet:
BC857CW,115

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Specifications
Nexperia USA Inc. BC857CW,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC857CW,115.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2009
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.21.00.95
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BC857
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    200mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    420 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    45V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    100MHz
  • Frequency - Transition
    100MHz
  • VCEsat-Max
    0.65 V
  • Collector-Base Capacitance-Max
    5pF
  • RoHS Status
    ROHS3 Compliant
Description
BC857CW,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.A transition frequency of 100MHz is present in the part.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.

BC857CW,115 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 100MHz


BC857CW,115 Applications
There are a lot of Nexperia USA Inc.
BC857CW,115 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC857CW,115 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
BC857 Series 45 V 100 mA SMT PNP General Purpose Transistor - SOT-323
Trans GP BJT PNP 65V 0.1A 200mW Automotive 3-Pin SC-70 T/R
BC856W; BC857W; BC858W - 65 V, 100 mA PNP general-purpose transistors
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Automotive AEC-Q101 Tape & Reel (TR) Surface Mount PNP Bipolar (BJT) Transistor 420 @ 2mA 5V 100mA 200mW 100MHz
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain Max (hfe):420 ;RoHS Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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