Diodes Incorporated BC857CT-7-F
- Part Number:
- BC857CT-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464623-BC857CT-7-F
- Description:
- TRANS PNP 45V 0.1A SOT-523
- Datasheet:
- BC857CT-7-F
Diodes Incorporated BC857CT-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC857CT-7-F.
- Factory Lead Time18 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-523
- Number of Pins3
- Weight2.012816mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC857CT
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-650mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- Height750μm
- Length1.6mm
- Width800μm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC857CT-7-F Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -650mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BC857CT-7-F Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857CT-7-F Applications
There are a lot of Diodes Incorporated
BC857CT-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -650mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BC857CT-7-F Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857CT-7-F Applications
There are a lot of Diodes Incorporated
BC857CT-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC857CT-7-F More Descriptions
DIODES INC. - BC857CT-7-F - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 150 mW, -100 mA, 520 hFE
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
BC857CT Series PNP 45 V 150 mW 100 mA Small Signal Transistor SMT - SOT-523
Transistor PNP 45V 0.1A SOT523 | Diodes Inc BC857CT-7-F
Transistor, PNP, SOT523; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation
Transistor, Pnp, -45V, -100Ma, 150Mw, Sot-523; Transistor Polarity:Pnp; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:150Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Diodes Inc. BC857CT-7-F
TRANSISTOR, PNP, SOT523; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 150mW; DC Collector Current: -100mA; DC Current Gain hFE: 520hFE; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -650mV; Current Ic Continuous a Max: -100mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 420; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
BC857CT Series PNP 45 V 150 mW 100 mA Small Signal Transistor SMT - SOT-523
Transistor PNP 45V 0.1A SOT523 | Diodes Inc BC857CT-7-F
Transistor, PNP, SOT523; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation
Transistor, Pnp, -45V, -100Ma, 150Mw, Sot-523; Transistor Polarity:Pnp; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:150Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Diodes Inc. BC857CT-7-F
TRANSISTOR, PNP, SOT523; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 150mW; DC Collector Current: -100mA; DC Current Gain hFE: 520hFE; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -650mV; Current Ic Continuous a Max: -100mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 420; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
04 March 2024
ADS1248IPWR Specifications, Characteristics, Applications and Market Trends
Ⅰ. Introduction to ADS1248IPWRⅡ. Specifications of ADS1248IPWRⅢ. Functional block diagram of ADS1248IPWRⅣ. Characteristics of ADS1248IPWRⅤ. Where is ADS1248IPWR used?Ⅵ. Absolute maximum ratings of ADS1248IPWRⅦ. Market trends of ADS1248IPWRⅧ.... -
05 March 2024
KA7500B: Efficient and Stable PWM Switching Regulator Controller
Ⅰ. What is KA7500B?Ⅱ. Characteristics of KA7500BⅢ. KA7500B working parts and principleⅣ. Internal block diagram of KA7500BⅤ. Applications of KA7500BⅥ. Can KA7500B and KA7500BD be replaced?Ⅶ. How to... -
05 March 2024
STM8S207CBT6 Microcontroller Functions, Specifications, Operating Principle and Package
Ⅰ. STM8S207CBT6 overviewⅡ. Functions of STM8S207CBT6Ⅲ. STM8S207CBT6 specificationsⅣ. STM8S207CBT6 structure and operating principleⅤ. Package and dimensions of STM8S207CBT6Ⅵ. Four low-power modes of STM8S207CBT6 microcontrollerⅦ. Application areas of STM8S207CBT6Ⅰ.... -
06 March 2024
ATMEGA2560-16AU: A Versatile Embedded Microcontroller
Ⅰ. ATMEGA2560-16AU overviewⅡ. Architecture of ATMEGA2560-16AUⅢ. ATMEGA2560-16AU block diagramⅣ. ATMEGA2560-16AU specificationsⅤ. Features of ATMEGA2560-16AUⅥ. Absolute maximum ratings of ATMEGA2560-16AUⅦ. Applications of ATMEGA2560-16AUWith the rapid development of science and...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.