BC857CM,315

Nexperia USA Inc. BC857CM,315

Part Number:
BC857CM,315
Manufacturer:
Nexperia USA Inc.
Ventron No:
2464905-BC857CM,315
Description:
TRANS PNP 45V 0.1A SOT883
ECAD Model:
Datasheet:
BC857CM,315

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Specifications
Nexperia USA Inc. BC857CM,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC857CM,315.
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-101, SOT-883
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Power Dissipation
    430mW
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    100MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BC857
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    430mW
  • Case Connection
    COLLECTOR
  • Power - Max
    150mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    45V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    420 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    45V
  • Transition Frequency
    100MHz
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
BC857CM,315 Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 100mA volts.

BC857CM,315 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


BC857CM,315 Applications
There are a lot of Nexperia USA Inc.
BC857CM,315 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC857CM,315 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Trans, Bipolar, Pnp, 45V, 0.1A, Dfn1006 Rohs Compliant: Yes |Nexperia BC857CM,315
BC857CM - 45 V, 100 mA PNP general-purpose transistor
Trans GP BJT PNP 45V 0.1A Automotive 3-Pin DFN T/R
Transistor, BIPOLAR, PNP, 45V, 0.1A, DFN1006;
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BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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