Nexperia USA Inc. BC857CM,315
- Part Number:
- BC857CM,315
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2464905-BC857CM,315
- Description:
- TRANS PNP 45V 0.1A SOT883
- Datasheet:
- BC857CM,315
Nexperia USA Inc. BC857CM,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC857CM,315.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-101, SOT-883
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation430mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC857
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation430mW
- Case ConnectionCOLLECTOR
- Power - Max150mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BC857CM,315 Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 100mA volts.
BC857CM,315 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857CM,315 Applications
There are a lot of Nexperia USA Inc.
BC857CM,315 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 100mA volts.
BC857CM,315 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857CM,315 Applications
There are a lot of Nexperia USA Inc.
BC857CM,315 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC857CM,315 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Trans, Bipolar, Pnp, 45V, 0.1A, Dfn1006 Rohs Compliant: Yes |Nexperia BC857CM,315
BC857CM - 45 V, 100 mA PNP general-purpose transistor
Trans GP BJT PNP 45V 0.1A Automotive 3-Pin DFN T/R
Transistor, BIPOLAR, PNP, 45V, 0.1A, DFN1006;
Bipolar Transistors - BJT BC857CM/SOT883/XQFN3
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Trans, Bipolar, Pnp, 45V, 0.1A, Dfn1006 Rohs Compliant: Yes |Nexperia BC857CM,315
BC857CM - 45 V, 100 mA PNP general-purpose transistor
Trans GP BJT PNP 45V 0.1A Automotive 3-Pin DFN T/R
Transistor, BIPOLAR, PNP, 45V, 0.1A, DFN1006;
Bipolar Transistors - BJT BC857CM/SOT883/XQFN3
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
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