Comchip Technology BC857BW-G
- Part Number:
- BC857BW-G
- Manufacturer:
- Comchip Technology
- Ventron No:
- 2465300-BC857BW-G
- Description:
- TRANS PNP 45V 100MA SOT323
- Datasheet:
- BC857BW-G
Comchip Technology BC857BW-G technical specifications, attributes, parameters and parts with similar specifications to Comchip Technology BC857BW-G.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Terminal FinishTIN
- SubcategoryOther Transistors
- Max Power Dissipation150mW
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- ConfigurationSingle
- Power - Max150mW
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)650mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2.2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Max Breakdown Voltage45V
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
BC857BW-G Overview
DC current gain in this device equals 220 @ 2.2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC857BW-G Features
the DC current gain for this device is 220 @ 2.2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC857BW-G Applications
There are a lot of Comchip Technology
BC857BW-G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 220 @ 2.2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC857BW-G Features
the DC current gain for this device is 220 @ 2.2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC857BW-G Applications
There are a lot of Comchip Technology
BC857BW-G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC857BW-G More Descriptions
Bipolar Transistors - BJT -50V, .-1A
TRANS PNP 45V 100MA SOT323
TRANS PNP 45V 100MA SOT323
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