Diodes Incorporated BC857BLP4-7

Name: BC857BLP4-7
Brand: Diodes Incorporated
SKU: 2463847-BC857BLP4-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC857BLP4-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2463847-BC857BLP4-7

Description:: TRANS PNP 45V 0.1A 3-DFN

ECAD Model:

Datasheet:: BC857BLP4-7

Specifications

Diodes Incorporated BC857BLP4-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC857BLP4-7.

Factory Lead Time
15 Weeks
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
250mW
Terminal Position
BOTTOM
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC857BLP4
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
250mW
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
220
Height
350μm
Length
1mm
Width
600μm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

BC857BLP4-7 Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.

BC857BLP4-7 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC857BLP4-7 Applications
There are a lot of Diodes Incorporated
BC857BLP4-7 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC857BLP4-7 More Descriptions

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Certification