Diodes Incorporated BC857BFA-7B

Name: BC857BFA-7B
Brand: Diodes Incorporated
SKU: 3585160-BC857BFA-7B
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC857BFA-7B

Manufacturer:: Diodes Incorporated

Ventron No:: 3585160-BC857BFA-7B

Description:: TRANS PNP 45V 0.1A X2-DFN0806-3

ECAD Model:

Datasheet:: BC857BFA-7B

Specifications

Diodes Incorporated BC857BFA-7B technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC857BFA-7B.

Factory Lead Time
15 Weeks
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
JESD-609 Code
e4
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
435mW
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Reference Standard
AEC-Q101
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
435mW
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
340MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
45V
Frequency - Transition
340MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
Height
350μm
Length
650μm
Width
850μm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

BC857BFA-7B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 340MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.

BC857BFA-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 340MHz

BC857BFA-7B Applications
There are a lot of Diodes Incorporated
BC857BFA-7B applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC857BFA-7B More Descriptions

Trans, Pnp, 45V, 0.1A, 150Deg C, 0.435W Rohs Compliant: Yes |Diodes Inc. BC857BFA-7B
100mA 45V PNP Signal Transistor DFN0806 | Diodes Inc BC857BFA-7B
Trans GP BJT PNP 45V 0.1A 435mW 3-Pin X2-DFN T/R
Transistor, PNP, 45V, 0.1A, 150DEG C, 0.435W;
TRANS PNP 45V 0.1A X2-DFN0806-3

Certification