Nexperia USA Inc. BC857B,215
- Part Number:
- BC857B,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2463106-BC857B,215
- Description:
- TRANS PNP 45V 0.1A SOT23
- Datasheet:
- BC857B,215
Nexperia USA Inc. BC857B,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC857B,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2001
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.95
- Terminal PositionDUAL
- Terminal FormGULL WING
- Base Part NumberBC857
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE
- Power - Max250mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
BC857B,215 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.A transition frequency of 100MHz is present in the part.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC857B,215 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC857B,215 Applications
There are a lot of Nexperia USA Inc.
BC857B,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.A transition frequency of 100MHz is present in the part.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC857B,215 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC857B,215 Applications
There are a lot of Nexperia USA Inc.
BC857B,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC857B,215 More Descriptions
Transistor General Purpose BJT PNP 45 Volt 0.1A Automotive 3-Pin TO-236AB
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
BC857 Series 45 V 100 mA SMT PNP General Purpose Transistor - SOT-23
Transistor PNP, SOT-23 (TO-236AB) 45V 100mASurface Mount
vp_BC856_BC857_BC858 - 65 V, 100 mA PNP general-purpose transistors
Trans Gp Bjt Pnp 45V 0.1A 250mW Automotive 3-Pin Sot-23 T/R
Bipolar Transistor, Pnp, -45V, -100Ma, 3-Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:250Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pinsrohs Compliant: Yes |Nexperia BC857B,215.
TRANSISTOR, PNP, -45V, -100MA, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 475 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 650 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 850
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
BC857 Series 45 V 100 mA SMT PNP General Purpose Transistor - SOT-23
Transistor PNP, SOT-23 (TO-236AB) 45V 100mASurface Mount
vp_BC856_BC857_BC858 - 65 V, 100 mA PNP general-purpose transistors
Trans Gp Bjt Pnp 45V 0.1A 250mW Automotive 3-Pin Sot-23 T/R
Bipolar Transistor, Pnp, -45V, -100Ma, 3-Sot-23, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:250Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pinsrohs Compliant: Yes |Nexperia BC857B,215.
TRANSISTOR, PNP, -45V, -100MA, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 475 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 650 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 850
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