Diodes Incorporated BC857A-7-F

Name: BC857A-7-F
Brand: Diodes Incorporated
SKU: 3068788-BC857A-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC857A-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 3068788-BC857A-7-F

Description:: TRANS PNP 45V 0.1A SOT23-3

ECAD Model:

Datasheet:: BC857A-7-F

Specifications

Diodes Incorporated BC857A-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC857A-7-F.

Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
200MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC857A
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Power - Max
300mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
650mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
125
Height
1mm
Length
3.05mm
Width
1.4mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

BC857A-7-F Overview
This device has a DC current gain of 125 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 650mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 200MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.

BC857A-7-F Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

BC857A-7-F Applications
There are a lot of Diodes Incorporated
BC857A-7-F applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC857A-7-F More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 45V 0.1A Automotive 3-Pin SOT-23 T/R
Trans GP BJT PNP 45V 0.1A 3Pin SOT23
Trans, Pnp, 45V, 0.1A, 150Deg C, 0.35W Rohs Compliant: Yes |Diodes Inc. BC857A-7-F

Certification