Nexperia USA Inc. BC857,235
- Part Number:
- BC857,235
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845145-BC857,235
- Description:
- TRANS PNP 45V 0.1A SOT23
- Datasheet:
- BC857,235
Nexperia USA Inc. BC857,235 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC857,235.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation250mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC857
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation250mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce125 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BC857,235 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC857,235 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857,235 Applications
There are a lot of Nexperia USA Inc.
BC857,235 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC857,235 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857,235 Applications
There are a lot of Nexperia USA Inc.
BC857,235 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC857,235 More Descriptions
Trans GP BJT PNP 45V 0.1A 250mW Automotive 3-Pin TO-236AB T/R
BC857 Series 45 V 100 mA PNP Surface Mount Silicon Transistor - SOT-23
vp_BC856_BC857_BC858 - 65 V, 100 mA PNP general-purpose transistors
TRANSISTOR PNP 45V 100MA SOT23
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
BC857 Series 45 V 100 mA PNP Surface Mount Silicon Transistor - SOT-23
vp_BC856_BC857_BC858 - 65 V, 100 mA PNP general-purpose transistors
TRANSISTOR PNP 45V 100MA SOT23
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
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