Nexperia USA Inc. BC856W,115
- Part Number:
- BC856W,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845739-BC856W,115
- Description:
- TRANS PNP 65V 0.1A SOT323
- Datasheet:
- BC856W,115
Nexperia USA Inc. BC856W,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC856W,115.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC856
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)65V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce125 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage65V
- Transition Frequency100MHz
- Max Breakdown Voltage65V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- Collector-Base Capacitance-Max5pF
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC856W,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 125 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 65V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC856W,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856W,115 Applications
There are a lot of Nexperia USA Inc.
BC856W,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 125 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 65V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC856W,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856W,115 Applications
There are a lot of Nexperia USA Inc.
BC856W,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC856W,115 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
BC856 Series 65 V 100 mA 200 mW PNP General Purpose Transistor - SOT-323-3
BC856W; BC857W; BC858W - 65 V, 100 mA PNP general-purpose transistors
Trans GP BJT PNP 65V 0.1A 200mW Automotive 3-Pin SC-70 T/R
TRANSISTOR, PNP, -65V, -100MA, SOT-323-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -65V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 125hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -65°C
BC856 Series 65 V 100 mA 200 mW PNP General Purpose Transistor - SOT-323-3
BC856W; BC857W; BC858W - 65 V, 100 mA PNP general-purpose transistors
Trans GP BJT PNP 65V 0.1A 200mW Automotive 3-Pin SC-70 T/R
TRANSISTOR, PNP, -65V, -100MA, SOT-323-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -65V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 125hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -65°C
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