BC856CW-G

Comchip Technology BC856CW-G

Part Number:
BC856CW-G
Manufacturer:
Comchip Technology
Ventron No:
3069035-BC856CW-G
Description:
TRANS PNP 65V 100A SOT323
ECAD Model:
Datasheet:
BC856CW-G

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Specifications
Comchip Technology BC856CW-G technical specifications, attributes, parameters and parts with similar specifications to Comchip Technology BC856CW-G.
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation
    150mW
  • Power - Max
    150mW
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    650mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    220 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    65V
  • Frequency - Transition
    100MHz
  • RoHS Status
    ROHS3 Compliant
Description
BC856CW-G Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BC856CW-G Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA


BC856CW-G Applications
There are a lot of Comchip Technology
BC856CW-G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC856CW-G More Descriptions
TRANS PNP 65V 0.1A SOT323
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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