Nexperia USA Inc. BC856BW,115

Name: BC856BW,115
Brand: Nexperia USA Inc.
SKU: 2463086-BC856BW,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC856BW,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2463086-BC856BW,115

Description:: TRANS PNP 65V 0.1A SOT323

ECAD Model:

Datasheet:: BC856BW,115

Specifications

Nexperia USA Inc. BC856BW,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC856BW,115.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Supplier Device Package
SC-70
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2009
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BC856
Polarity
PNP
Power Dissipation
200mW
Power - Max
200mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
65V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant

Description

BC856BW,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package SC-70 contains the product.The device has a 65V maximal voltage - Collector Emitter Breakdown.

BC856BW,115 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of SC-70

BC856BW,115 Applications
There are a lot of Nexperia USA Inc.
BC856BW,115 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC856BW,115 More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
BC856BW - 65 V, 100 mA PNP general-purpose transistor
BIPOLAR TRANSISTOR, PNP, -65V, -100MA, 3-SOT-323
Trans GP BJT PNP 65V 0.1A 200mW Automotive 3-Pin SC-70 T/R
Bipolar Transistor, Pnp, -65V, -100Ma, 3-Sot-323, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:200Mw; Transistor Mounting:Surface Mount; Product Range:- Rohs Compliant: Yes |Nexperia BC856BW,115.
TRANSISTOR PNP 65V 0.1A SOT323; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:-65V; Typ Gain Bandwidth ft:100MHz; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-323; SVHC:No SVHC (18-Jun-2010); Case Style:SOT-323; Max Current Ic Continuous a:-10mA; Max Voltage Vce Sat:-300mV; Min Hfe:220; Power Dissipation:200mW; Termination Type:SMD; Transistor Type:General Purpose
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 65 / DC Current Gain (hFE) = 475 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 200 / Package Type = SOT-323 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 600 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 850

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