BC856BMTF

Fairchild/ON Semiconductor BC856BMTF

Part Number:
BC856BMTF
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2463132-BC856BMTF
Description:
TRANS PNP 65V 0.1A SOT-23
ECAD Model:
Datasheet:
BC856-860

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Specifications
Fairchild/ON Semiconductor BC856BMTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC856BMTF.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    310mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    65V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    150MHz
  • Frequency - Transition
    150MHz
  • RoHS Status
    ROHS3 Compliant
Description
BC856BMTF Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.150MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 65V.

BC856BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 150MHz


BC856BMTF Applications
There are a lot of Rochester Electronics, LLC
BC856BMTF applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC856BMTF More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
BC856 Series 65 V CE Breakdown .1 A PNP Epitaxial Silicon Transistor - SOT-23
Trans GP BJT PNP 65V 0.1A 3-Pin SOT-23 T/R - Tape and Reel
Bipolar Transistors - BJT SOT-23 PNP GP AMP
TRANSISTOR, PNP, -65V, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage Max: 65V; Continuous Collector Current: 100mA; Power Dissipation: 310mW; Transistor Mounting: Surface Mount; No. of Pins: 3 15R3416
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:65V; Continuous Collector Current, Ic:0.1A; Collector Emitter Saturation Voltage, Vce(sat):0.25V; Power Dissipation, Pd:310mW
TRANSISTOR, PNP, -65V, SOT-23; Transisto; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:150MHz; Power Dissipation Pd:310mW; DC Collector Current:-100mA; DC Current Gain hFE:110
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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