Fairchild/ON Semiconductor BC856BMTF
- Part Number:
- BC856BMTF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463132-BC856BMTF
- Description:
- TRANS PNP 65V 0.1A SOT-23
- Datasheet:
- BC856-860
Fairchild/ON Semiconductor BC856BMTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC856BMTF.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max310mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)65V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency150MHz
- Frequency - Transition150MHz
- RoHS StatusROHS3 Compliant
BC856BMTF Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.150MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 65V.
BC856BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 150MHz
BC856BMTF Applications
There are a lot of Rochester Electronics, LLC
BC856BMTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.150MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 65V.
BC856BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 150MHz
BC856BMTF Applications
There are a lot of Rochester Electronics, LLC
BC856BMTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC856BMTF More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
BC856 Series 65 V CE Breakdown .1 A PNP Epitaxial Silicon Transistor - SOT-23
Trans GP BJT PNP 65V 0.1A 3-Pin SOT-23 T/R - Tape and Reel
Bipolar Transistors - BJT SOT-23 PNP GP AMP
TRANSISTOR, PNP, -65V, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage Max: 65V; Continuous Collector Current: 100mA; Power Dissipation: 310mW; Transistor Mounting: Surface Mount; No. of Pins: 3 15R3416
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:65V; Continuous Collector Current, Ic:0.1A; Collector Emitter Saturation Voltage, Vce(sat):0.25V; Power Dissipation, Pd:310mW
TRANSISTOR, PNP, -65V, SOT-23; Transisto; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:150MHz; Power Dissipation Pd:310mW; DC Collector Current:-100mA; DC Current Gain hFE:110
BC856 Series 65 V CE Breakdown .1 A PNP Epitaxial Silicon Transistor - SOT-23
Trans GP BJT PNP 65V 0.1A 3-Pin SOT-23 T/R - Tape and Reel
Bipolar Transistors - BJT SOT-23 PNP GP AMP
TRANSISTOR, PNP, -65V, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage Max: 65V; Continuous Collector Current: 100mA; Power Dissipation: 310mW; Transistor Mounting: Surface Mount; No. of Pins: 3 15R3416
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:65V; Continuous Collector Current, Ic:0.1A; Collector Emitter Saturation Voltage, Vce(sat):0.25V; Power Dissipation, Pd:310mW
TRANSISTOR, PNP, -65V, SOT-23; Transisto; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Transition Frequency ft:150MHz; Power Dissipation Pd:310mW; DC Collector Current:-100mA; DC Current Gain hFE:110
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